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d a t a sh eet preliminary speci?cation supersedes data of 1997 sep 16 file under integrated circuits, ic11 1999 aug 10 integrated circuits UBA2030T full bridge driver ic
1999 aug 10 2 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T features full bridge driver integrated bootstrap diodes integrated high voltage level shift function high voltage input (570 v maximum) for the internal supply adjustable dead time adjustable oscillator frequency high voltage level shifter for the bridge enable function shut-down function. applications the UBA2030T can drive the mosfets in any type of load configured as a full bridge the circuit is intended as a commutator for high intensity discharge (hid) lamps. general description the UBA2030T is a high voltage integrated circuit fabricated using the bcd750 power logic process. the circuit is designed for driving the mosfets in a full bridge configuration. in addition, it features a shut-down function, an adjustable oscillator and a pmos high voltage level shifter to control the bridge enable function. to guarantee an accurate 50% duty factor, the oscillator signal passes through a divider before being fed to the output drivers. ordering information type number package name description version UBA2030T so24 plastic small outline package; 24 leads; body width 7.5 mm sot137-1
1999 aug 10 3 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T quick reference data symbol parameter conditions min. typ. max. unit high voltage v hv high voltage supply 0 - 570 v start-up; powered via pin hv i strtu start-up current - 0.7 1.0 ma v th(osc strt) start oscillating threshold voltage at f bridge = 500 hz; no load 14.0 15.5 17.0 v v th(osc stp) stop oscillating threshold voltage 11.5 13.0 14.5 v output drivers i o(source) output source current v dd =v fsl =v fsr =15v; v ghr =v ghl =v glr =v gll =0v 140 190 240 ma i o(sink) output sink current v dd =v fsl =v fsr =15v; v ghr =v ghl =v glr =v gll =15v 200 260 320 ma internal oscillator f bridge bridge oscillating frequency exo pin connected to sgnd 50 - 50000 hz external oscillator f osc(ext) external oscillator frequency rc pin connected to sgnd; 100 - 100000 hz dead time control t dead dead time control range (adjusted externally) 0.4 - 4 m s bridge enable i ih high-level input current bridge enable active 100 - 700 m a i il low-level input current bridge enable not active 0 - 20 m a shut-down v ih high-level input voltage shut-down active; 4.5 - v dd v v il low-level input voltage shut-down not active; 0 - 0.5 v f bridge f osc(ext) 2 ----------------- = d v sd d t -------------- 5 v/ms > d v sd d t -------------- 5 v/ms >
1999 aug 10 4 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T block diagram fig.1 block diagram. handbook, full pagewidth mgk590 low voltage level shifter low voltage supply high voltage level shifter higher left driver lower left driver lower right driver higher right driver bridge enable oscillator logic 2 18 24 23 5 20 22 87 hv ber be sgnd v dd rc exo dtc 21 sd 4, 6, 9, 16, 17, 19 n.c. 1 glr 2 pgnd 3 gll 13 shr 14 ghr 11 ghl 15 fsr 12 shl 10 fsl UBA2030T
1999 aug 10 5 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T pinning symbol pin description glr 1 gate of lower right mosfet pgnd 2 power ground for sources of lower left and right mosfets gll 3 gate of lower left mosfet n.c. 4 not connected rc 5 rc input for internal oscillator n.c. 6 not connected be 7 bridge enable control input ber 8 bridge enable reference input n.c. 9 not connected fsl 10 ?oating supply voltage left output ghl 11 gate of higher left mosfet shl 12 source of higher left mosfet shr 13 source of higher right mosfet ghr 14 gate of higher right mosfet fsr 15 ?oating supply voltage right output n.c. 16 not connected n.c. 17 not connected hv 18 high voltage supply input n.c. 19 not connected exo 20 external oscillator input sd 21 shut-down input dtc 22 dead time control input v dd 23 internal (low voltage) supply sgnd 24 signal ground fig.2 pin configuration. handbook, halfpage glr pgnd gll n.c. rc n.c. be ber n.c. fsl ghl shl sgnd v dd dtc sd n.c. hv exo n.c. n.c. fsr ghr shr 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 UBA2030T mgk589
1999 aug 10 6 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T functional description supply voltage the UBA2030T is powered by a single supply voltage connected to the hv pin (the full bridge supply could be used, for example). the ic generates its own low voltage supply for driving the internal circuitry and the mosfets in the full bridge, removing the need for an additional low voltage supply. a capacitor must be connected between the v dd pin and sgnd to obtain a ripple-free internal supply voltage. start-up when the power is turned on, the UBA2030T enters a start-up phase; the high side mosfets are switched off and the low side mosfets switched on. during start-up, the bootstrap capacitors are charged and the bridge output current is zero. oscillation at the point where the supply voltage at the hv pin crosses the start oscillating threshold, the bridge begins commutating between the following two defined states: higher left and lower right mosfets on, higher right and lower left mosfets off higher left and lower right mosfets off, higher right and lower left mosfets on. when the internal oscillator is used, the bridge commutating frequency is determined by the values of an external resistor and capacitor. in this mode, the exo pin must be connected to sgnd. when an external oscillator is used, its output must be connected to the exo pin; the internal oscillator must be disabled by connecting the rc pin to sgnd. the bridge commutating frequency is half the oscillator frequency due to a ? 2 circuit which guarantees an accurate 50% duty factor. the time between turning off the conducting pair of mosfets and turning on the other pair, the dead time, can be adjusted using an external resistor. if the supply voltage at the hv pin falls below the stop oscillating threshold, the UBA2030T re-enters the start-up phase. bridge enable the bridge enable function allows the bridge to be held in its current state. when active, it connects the rc pin to sgnd, disabling the internal oscillator. if the bridge enable function is activated during dead time, the bridge is allowed to enter the next conducting state before being held. oscillations resume the instant the bridge enable function is turned off. a timing diagram is shown in fig.3. to hold the bridge, an external control circuit is required to provide a source current to the bridge enable control input (pin be), and to supply a reference voltage to pin ber, (see fig.6). shut-down the active high shut-down input (pin sd) can be used at any time to turn off all four mosfets. however, if the supply voltage drops below the stop oscillating threshold, the bridge re-enters the start-up phase even if the shut-down function is active.
1999 aug 10 7 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T fig.3 timing diagram. handbook, full pagewidth mgk594 dead time v rc v be v ghl v glr v ghr v gll on off time
1999 aug 10 8 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T limiting values in accordance with the absolute maximum rating system (iec 134). notes 1. this value is guaranteed down to t j = - 25 c. from t j = - 25 to - 40 c, the voltage on pin hv is limited to 530 v and the floating supply voltage (v fsl ,v fsr ) is limited to a maximum value of 548 v. 2. in accordance with the human body model: equivalent to discharging a 100 pf capacitor through a 1.5 k w series resistor. thermal characteristics quality specification in accordance with snw-fq-611 part e . the numbers of the quality specification can be found in the quality reference handbook . symbol parameter conditions min. max. unit v dd supply voltage (low voltage) 0 18 v v hv supply voltage (high voltage) note 1 0 570 v v fsl ;v fsr ?oating supply voltage v shl =v shr = 570 v, note 1 570 588 v v shl =v shr = 0 v 0 18 v v shl ;v shr source voltage for higher right and left mosfets with reference to pgnd and sgnd - 10 +570 v v pgnd power ground voltage with reference to sgnd - 7 +10 v v i(ber) bridge enable reference input voltage 0 570 v v i(be) bridge enable control input voltage v i(ber) = 570 v 570 580 v v i(ber) =0v 0 10 v i i(be) bridge enable control input current 0 700 m a v i(exo) input voltage from external oscillator on pin exo 0v dd v v sd shut-down input voltage on pin sd 0 v dd v sr slew rate at output pins repetitive - 4 +4 v/ns t j junction temperature - 40 +150 c t amb ambient temperature - 40 +150 c t stg storage temperature - 55 +150 c v es electrostatic handling note 2 pin hv - 1250 v pins be, ber, fsl, ghl, shl, shr, ghr and fsr - 1500 v symbol parameter value unit r th(j-a) thermal resistance from junction to ambient 70 k/w
1999 aug 10 9 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T characteristics t j =25 c; all voltages with respect to pgnd; positive currents ?ow into the ic. symbol parameter conditions min. typ. max. unit high voltage v hv high voltage supply 0 - 570 v i l leakage current with hv = 570 v applied to pins ber, shr and shl -- 5 m a v pgnd(?oat) ; v sgnd(?oat) ?oating ground voltage 0 - 5v start-up, powered via the hv pin; note 1 i strtu start-up current - 0.7 1.0 ma v strtu start-up voltage high left and right mosfets off; low left and right mosfets on - 6 - v v th(osc strt) start oscillating threshold voltage f bridge = 500 hz; no load 14.0 15.5 17.0 v v th(osc stp) stop oscillating threshold voltage 11.5 13.0 14.5 v v hys hysteresis voltage between oscillation start and stop levels 2.0 2.5 3.0 v i hv supply current f bridge = 500 hz; no load; v hv = 50 v 0.3 0.5 0.7 ma v dd internal supply voltage (low voltage) f bridge = 500 hz; no load; v hv = 50 v 14.0 15.3 16.5 v f bridge = 500 hz; no load; at start oscillating threshold 10.5 11 11.5 v f bridge = 500 hz; no load; at stop oscillating threshold 8.0 8.5 9.0 v output drivers v o(ghl,ghr) output voltage on pins ghl and ghr for gates of higher right and left mosfets at power-up; no load; v hv =50v; f bridge = 500 hz; 13.2 14.5 16.5 v v o(gll,glr) output voltage on pins gll and glr for gates of lower right and left mosfets 14.0 15.3 16.5 v d t time difference between diagonally placed output drivers 0 - 100 ns r onh higher mosfets on resistance v fsr =v fsl = 15 v; i source =50ma 33 39 46 w r offh higher mosfets off resistance v fsr =v fsl = 15 v; i sink =50ma 11 14 17 w r onl lower mosfets on resistance v dd =15v; i source =50ma 333946 w r offl lower mosfets off resistance v dd =15v; i sink =50ma 111417 w v diode bootstrap diode voltage drop i diode = 1 ma 0.8 1.0 1.2 v
1999 aug 10 10 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T i o(source) output source current v dd =v fsl =v fsr =15v; v ghr =v ghl =v glr =v gll =0v 140 190 240 ma i o(sink) output sink current v dd =v fsl =v fsr =15v; v ghr =v ghl =v glr =v gll =15v 200 260 320 ma i fsl(?oat) ; i fsr(?oat) ?oating supply current v fsr =v fsl =15v - 15 -m a internal oscillator; notes 2 and 3 f bridge bridge oscillating frequency exo pin connected to sgnd 50 - 50000 hz d f osc / d t oscillator frequency dependency with respect to temperature ?xed rc; d t= - 40 c to +150 c0 - 10 % d f osc / d v dd oscillator frequency dependency with respect to v dd ?xed rc; d v dd =12to16v 0 - 10 % k h high-level trip point v rch =k h v dd 0.67 0.71 0.75 k l low-level trip point v rcl =k l v dd - 0.01 - k osc oscillator constant 2.34 2.49 2.64 external oscillator; note 2 f osc(ext) external oscillator frequency rc pin connected to sgnd; 100 - 100000 hz v ih high-level input voltage 4.5 - v dd v v il low-level input voltage 0 - 0.5 v i i(exo) input current 0 - 50 m a dead time control; notes 2 and 4 t dead dead time control range (adjusted externally) 0.4 - 4 m s k dt dead time variable r dt =k dt t dead - 70 k w 180 270 380 k w / m s bridge enable; notes 2 and 5 i ih high-level input current; note 6 bridge enable active 100 - 700 m a v be - v ber =5v - 1.1 - ma i il low-level input current bridge enable not active 0 - 20 m a v be - v ber threshold voltage i ih = 100 m a with reference to hv with reference to pgnd 2.1 3.5 2.6 5.5 3.0 7.5 v v symbol parameter conditions min. typ. max. unit f bridge 1 k osc r osc c osc () -------------------------------------------------- = f bridge f osc(ext) 2 ----------------- = d v exo d t ----------------- 5 v/ms > d v exo d t ----------------- 5 v/ms >
1999 aug 10 11 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T notes 1. the current into pin hv is internally limited to 15 ma at t j =25 c and to 10 ma at t j = 150 c. 2. v dd =15v. 3. the bridge frequency can be calculated using equation (1). 4. the dead time is adjusted using an external resistor; see equation (2). 5. this function is disabled when using an external oscillator. 6. i ih < 2.1 ma when the condition is v be - v ber = 5 v at t j = 150 c. shut-down; note 2 v ih high-level input voltage shut-down active; 4.5 - v dd v v il low-level input voltage shut-down not active; 0 - 0.5 v i i(sd) input current 0 - 50 m a symbol parameter conditions min. typ. max. unit d v sd d t -------------- 5 v/ms > d v sd d t -------------- 5 v/ms > design equations b ridge commutation frequency the internal ? 2 circuit requires the frequency of the internal or external oscillator to be twice the bridge frequency. when the internal oscillator is used, the bridge frequency can be adjusted using an external resistor and capacitor: (1) where: r osc(min) = 200 k w r osc(max) =2m w (with low leakage current). d ead time (2) the dead time (t dead ) can be adjusted using an external resistor (r dt ) connected between dtc and sgnd: units are k w for r dt and m s for t dead . where: r dt(min) =50k w r dt(max) =1m w . f bridge 1 2.8 r osc c osc ------------------------------------------- - = r dt 270 t dead 70 C =
1999 aug 10 12 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T application information basic application a basic full bridge configuration with an hid lamp is shown in fig.4. the bridge enable and shut-down functions are not used in this application. the exo, be, ber and sd pins are connected to system ground. the ic is powered by the high voltage supply. when the internal oscillator is used; the bridge commutating frequency is determined by the values of r osc and c osc . the bridge starts oscillating when the hv supply voltage exceeds the start oscillating threshold (typically 15.5 v). if the supply voltage at the hv pin falls below the stop oscillating threshold (typically 13 v), the UBA2030T enters the start-up state. fig.4 basic configuration. handbook, full pagewidth UBA2030T shr ghr fsr v dd sgnd hv exo sd dtc shl ghl fsl pgnd glr ber be rc gll 13 14 15 18 20 21 22 23 24 12 11 10 8 7 5 3 2 1 ignitor lamp c i c3 r dt c2 c4 c1 ll hl c5 lr hr high voltage 570 v (max) system ground c osc r osc mgk592
1999 aug 10 13 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T application with external control figure 5 shows an application containing an external oscillator control circuit referenced to system ground. the rc, ber and be pins are connected to system ground. the bridge commutation frequency is determined by the external oscillator. the shut-down input (pin sd) can be used to quickly turn off all four mosfets in the full bridge. fig.5 external control configuration. handbook, full pagewidth UBA2030T shr ghr fsr v dd sgnd hv exo sd dtc shl ghl fsl pgnd glr ber be rc gll 13 14 15 18 20 21 22 23 24 12 11 10 8 7 5 3 2 1 ignitor lamp c i c3 r dt c2 c4 c1 ll hl c5 lr hr system ground mgk593 external oscillator control circuit high voltage 570 v (max)
1999 aug 10 14 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T automotive application the life of an hid lamp depends on the rate of sodium migration through its quartz wall. to minimize this, the lamp must be operated negative with respect to system ground. figure 6 shows a full bridge with an hid lamp in an automotive environment, and a control circuit referenced to the high side of the bridge. the ber and hv pins are connected to system ground. the bridge can be held in its current state using the be pin. see the timing diagram in fig.3. fig.6 automotive configuration (example 1). handbook, full pagewidth UBA2030T shr ghr fsr v dd sgnd hv exo sd dtc shl ghl fsl pgnd glr ber be rc gll 13 14 15 18 20 21 22 23 24 12 11 10 8 7 5 3 2 1 ignitor lamp c i c3 r dt c2 c4 c1 ll hl c5 lr hr high voltage - 570 v (max) system ground control unit c osc r osc mgk591
1999 aug 10 15 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T additional application information the UBA2030T is the commutator part in a complete system for driving an hid lamp. the life of the hid lamp can depend on the amount of sodium that migrates through its quartz wall. to minimize this migration, the lamp must be operated negative with respect to system ground. figure 7 shows a full bridge with an hid lamp in a typical automotive configuration using a control unit referenced to the high side of the bridge. pin ber is connected to system ground. the bridge can be held in its current state by pin be. the supply current to the internal low voltage circuit is fed to pin hv which can be connected to either system ground or to a low voltage dc supply, such as a battery, as indicated by the dotted lines in fig.7. the diode in series with the supply to pin hv prevents c i being discharged if the lamp is shorted during the ignition phase. c6 should be positioned as close as possible to pin dtc. the control unit drives the mosfets relatively hard which can cause radiation. to prevent switching the mosfets hard, a resistor can be connected in series with each gate. in all applications, the voltage on pin hv must not be allowed to become lower than the voltage at pin v dd during the start-up phase or during normal operation, otherwise the full bridge will not operate correctly. during the start-up phase, pin exo and pin sd should both be low. the voltage as a function of time at pin exo and pin sd should be >5 v/ms. fig.7 automotive configuration (example 2). handbook, full pagewidth UBA2030T shr ghr fsr v dd sgnd hv exo sd dtc shl ghl fsl pgnd glr ber be rc gll 13 14 15 18 20 21 22 23 24 12 11 10 8 7 5 3 2 1 ignitor lamp c i c i c3 c6 r dt c2 c4 c1 ll hl c5 lr hr high voltage - 570 v (max) system ground control unit from low voltage dc supply c osc r osc mgl763 c1 = 150 nf. c2 = 150 nf. c3 = 220 nf. c6 = 100 pf. c osc =10nf. r osc = 147 k w. r dt =50to1000k w (220 k w = a dead time of 1 m s).
1999 aug 10 16 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T package outline unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 15.6 15.2 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot137-1 x 12 24 w m q a a 1 a 2 b p d h e l p q detail x e z c l v m a 13 (a ) 3 a y 0.25 075e05 ms-013ad pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.61 0.60 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 e 1 0 5 10 mm scale so24: plastic small outline package; 24 leads; body width 7.5 mm sot137-1 95-01-24 97-05-22
1999 aug 10 17 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1999 aug 10 18 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. package soldering method wave reflow (1) bga, sqfp not suitable suitable hlqfp, hsqfp, hsop, htqfp, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1999 aug 10 19 philips semiconductors preliminary speci?cation full bridge driver ic UBA2030T notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 1999 67 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 printed in the netherlands 295002/02/pp 20 date of release: 1999 aug 10 document order number: 9397 750 05309

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